{"id":5143,"date":"2019-08-28T08:07:43","date_gmt":"2019-08-28T08:07:43","guid":{"rendered":"https:\/\/blog.uk.tdk-lambda.com\/uk\/?p=5143"},"modified":"2019-09-26T11:06:00","modified_gmt":"2019-09-26T11:06:00","slug":"how-gan-technology-is-transforming-power-supply-design","status":"publish","type":"post","link":"https:\/\/blog.uk.tdk-lambda.com\/uk\/2019\/08\/28\/how-gan-technology-is-transforming-power-supply-design\/","title":{"rendered":"How GaN technology is transforming power supply design"},"content":{"rendered":"\n

AC-DC power\nsupplies used in the industrial and medical industries have always had three\nbasic requirements: reliability, compactness and the ability to remain cool.\nVarious technological leaps have made possible massive improvements in these\nareas, from the switch mode power supplies of the 1970s to today\u2019s gallium\nnitride solutions. In this article, Jin He, Vice President of Engineering at\nTDK-Lambda USA follows the technological journey of the power supply from its\norigins to the compact and efficient designs available today.<\/p>\n\n\n\n

The more\nefficient the power supply, the smaller it can be. However, if the package\nbecomes too small it is difficult to cool. As internal temperatures rise, the\nelectrolytic capacitors dry out and semiconductor junctions overheat,\nshortening its lifespan. An efficient power supply reduces the amount of heat\nwasted, and components such as heatsinks and filters can be smaller. For\nexample, a 75% efficient 1000W power supply will consume 1,333W to output\n1000W, 333W of which will be losses. Meanwhile a 95% efficient product will\nconsume 1,053W with just 53W losses.  <\/p>\n\n\n\n

The constant\ndrive towards smaller, more efficient power supplies is linked to a series of\ntechnological innovations in power supply design. The first of these came in\nthe 1970s, when switch mode power supplies began to be mass produced, replacing\nlinear supplies which were bulky, inefficient and had a narrow input range.\nLater, an increase in operating frequency from 20 kHz to more than 100 kHz was\nmade possible by high-speed MOSFETs, which took over from bi-polar power\ntransistors.<\/p>\n\n\n\n

Further\nimprovements were based on increased electrolytic capacitor life \u2013 from 2,000\nhours to more than 10,000 hours, the introduction of surface mount technology,\nand the increasing affordability of multiple layer printed circuit boards. Even\nhigher-frequency switching and lower losses have been facilitated by evolving\ncore shapes and new ferrite materials.<\/p>\n\n\n\n

The benefits\nof technological advances must always be weighed against the associated\nincrease in complexity. For example, synchronous rectification is now fairly\nstandard in both AC-DC power supplies and DC-DC converters. Figure 1 shows how the\nlow forward voltage drop Schottky diodes (which replaced silicon diodes) have\nbeen replaced by low resistance (RDSON<\/sub>) MOSFETs. The FETS need drive\ncircuits, but in this case the improvement in efficiency and performance justifies\nthe added complexity.<\/p>\n\n\n\n

\"\"
Figure 1. Secondary circuit synchronous rectification<\/figcaption><\/figure>\n\n\n\n

A major\nchange in the past ten years has been the gradual replacement of analogue\ncontrol ICs with digital signal processors (DSPs). Digital control loops are\nmore stable, more flexible (software can be modified without the need to change\ncircuitry) and they enable PMBus™ interfaces to be included in the power supply\ndesign.<\/p>\n\n\n\n

Perhaps the\nmost significant advance in recent years, though, has been the introduction of\ngallium nitride (GaN) technology. This replaces silicon-based power devices,\nand later silicon carbide (SiC) versions. GaN is a wide-bandgap (WBG)\nsemiconductor, which in practice means more efficient 100V to 650V rated\ndevices are possible.<\/p>\n\n\n\n

GaN is now achieving widespread success simply because it enables increased efficiency at a reduced size \u2013 two of the key power supply requirements. Datacentres, the military and manufacturers of equipment requiring fanless operation, lower operating cost and smaller size have been early adopters of this technology. Transphorm Inc., a leader in GaN development and a global producer of semiconductors, recently announced that it has shipped more than 250,000 650V GaN high electron mobility transistors (HEMTs). It currently has a 15 million annual part capacity base. TDK-Lambda partnered with Transphorm Inc. to develop its PFH500F series of third-generation 500W AC-DC conduction cooled power modules<\/a>.  <\/p>\n\n\n\n

As ever, the objective was to reduce the size and increase the power conversion efficiency of the existing AC-DC power modules in the TDK-Lambda PFE series<\/a>. The GaN HEMTs meant that TDK-Lambda could use a bridgeless totem-pole power factor correction (PFC) topology, instead of traditional full-bridge rectification. The PFC circuit converts the AC input into a regulated high voltage DC (380 to 400VDC). A DC-DC power converter lowers the high voltage DC to a regulated low DC output voltage with electrical isolation, usually at between 5 and 48V.<\/p>\n\n\n\n

Figure 2\nshows how diodes can be configured for full wave rectification in a PFC circuit.\nWith power to the switching converter, there are two diode drops in the\nrectifier part of the circuit and one diode drop in the boost stage. This\nresults in three diode drops in total.<\/p>\n\n\n\n

\"\"
Figure 2: Diode rectifiers in a PFC circuit<\/figcaption><\/figure>\n\n\n\n
\"\"
Figure 3: Totem-pole bridgeless PFC (two diodes and two GaN HEMTs)<\/figcaption><\/figure>\n\n\n\n

The GaN HEMT\ndevices make possible a design that could not have been realised using\ntraditional silicon MOSFETs, because of the high bus voltage and their large\nreverse recovery charge. There is just one diode drop in the totem-pole PFC\ntopology, as seen in Figure 3. Replacing the remaining line frequency diodes\nwith Si FETs operating at AC-line low frequency will result in no diode drop.\nBut in the totem-pole PFC topology, two of the slow diodes are replaced with GaN\nHEMTs. The DC bus voltage is always higher than the input AC-line voltage. Si\nFETs can only be used in the totem-pole PFC circuit in discontinuous mode\noperation, as they cause too much peak current in the switching devices, boost\ninductor and input filtering components, meaning EMI becomes unmanageable.<\/p>\n\n\n\n

Looking at\nthe performance in comparison to the PFE500F AC-DC power module, it is possible\nto appreciate a significant improvement. <\/p>\n\n\n\n
Power efficiency <\/td> Up to 92% (5% increase)   <\/td><\/tr>
Power density <\/td>100W\/cubic inch (30% increase)   <\/td><\/tr>
Size reduction <\/td>28%   <\/td><\/tr>
Thermal impact   <\/td>Waste heat reduced by 38% (makes it easier to cool) <\/td><\/tr>
Space savings <\/td>Savings mean that PMBus™
monitoring and programming
(read\/write) can be included <\/td><\/tr><\/tbody><\/table>\n\n\n\n

As with any\nnew technology, GaN was used carefully at first in the power supply industry,\nwith an eye on its limitations as well as potential benefits. Product\ndevelopment had to accommodate the fact that replacing a silicon MOSFET with a\nGaN FET is not straightforward. For example, the switches are more sensitive to\ninternal and external parasitic impedances. The drive circuit also requires\ngreater timing precision. Cost was also a factor, as in the early days GaN\ndevices were produced in much lower volumes than silicon MOSFETs so there were\nno economies of scale.<\/p>\n\n\n\n

Now,\nhowever, increased confidence and expertise in the deployment of GaN technology\nin power supply devices means that prices will drop dramatically. Production\nvolumes will increase, but so too will environmental regulation, encouraging\never greater efficiency and ongoing design innovation. GaN in power supply\ndesign is here to stay. <\/p>\n","protected":false},"excerpt":{"rendered":"

AC-DC power supplies used in the industrial and medical industries have always had three basic requirements: reliability, compactness and the ability to remain cool. Various technological leaps have made possible massive improvements in these areas, from the switch mode power supplies of the 1970s to today\u2019s gallium nitride solutions. In this article, Jin He, Vice […]<\/p>\n","protected":false},"author":8,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[17,24,98,1,22],"tags":[],"class_list":["post-5143","post","type-post","status-publish","format-standard","hentry","category-news","category-pfe","category-pfh","category-power-supply-basics","category-products"],"acf":[],"yoast_head":"\nHow GaN technology is transforming power supply design « TDK-Lambda UK Blog<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/blog.uk.tdk-lambda.com\/uk\/2019\/08\/28\/how-gan-technology-is-transforming-power-supply-design\/\" \/>\n<meta property=\"og:locale\" content=\"en_GB\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"How GaN technology is transforming power supply design « TDK-Lambda UK Blog\" \/>\n<meta property=\"og:description\" content=\"AC-DC power supplies used in the industrial and medical industries have always had three basic requirements: reliability, compactness and the ability to remain cool. Various technological leaps have made possible massive improvements in these areas, from the switch mode power supplies of the 1970s to today\u2019s gallium nitride solutions. In this article, Jin He, Vice […]\" \/>\n<meta property=\"og:url\" content=\"https:\/\/blog.uk.tdk-lambda.com\/uk\/2019\/08\/28\/how-gan-technology-is-transforming-power-supply-design\/\" \/>\n<meta property=\"og:site_name\" content=\"TDK-Lambda UK Blog\" \/>\n<meta property=\"article:published_time\" content=\"2019-08-28T08:07:43+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2019-09-26T11:06:00+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/blog.uk.tdk-lambda.com\/uk\/files\/2019\/08\/tdk1.png\" \/>\n<meta name=\"author\" content=\"Martin\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" content=\"Martin\" \/>\n\t<meta name=\"twitter:label2\" content=\"Estimated reading time\" \/>\n\t<meta name=\"twitter:data2\" content=\"5 minutes\" \/>\n<script type=\"application\/ld+json\" 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